文章基本信息

标题：Passivation of HfO2/Ge interface with YON fabricated by different approaches
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作者：Z. X. Cheng ; Z. X. Cheng ; Q. Xu 等
期刊名称：MATEC Web of Conferences
电子版ISSN：2261-236X
出版年度：2017
卷号：104
页码：1-6
DOI：10.1051/matecconf/201710401006
语种：English
出版社：EDP Sciences
摘要：Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface for better interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor. Two different approaches were used to prepare the YON IPL, one is to deposit YON directly by sputtering Y2O3 target in Ar+N2 ambient, and the other is to deposit YN first by sputtering Y target in Ar+N2 ambient followed by the annealing in N2+O2 to convert YN to YON. Experimental results indicate that the MOS capacitor fabricated by the latter approach could achieve more excellent interfacial and electrical properties due to more effective suppression of the formation of Ge oxides.